View IRFI4019H-117P-15_8379287.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www.irf.com 1 8/22/06 irfi4019h-117p notes through are on page 2
to-220 full-pak 5 pin features integrated half-bridge package reduces the part count by half facilitates better pcb layout key parameters optimized for class-d audio amplifier applications low r ds(on) for improved efficiency low qg and qsw for better thd and improved efficiency low qrr for better thd and lower emi can delivery up to 200w per channel into 8 ? load in half-bridge configuration amplifier lead-free package description this digital audio mosfet half-bridge is specifically designed for class d audio amplifier applications. it consists of two power mosfet switches connected in half-bridge configuration. the latest process is used to achieve low on-resistance per silicon area. furthermore, gate charge, body-diode reverse recovery, and internal gate resistance are optimized to improve key class d audio amplifier performance factors such as efficiency, thd and emi. these combine to make this half-bridge a highly efficient, robust and reliable device for class d audio amplifier applications. g1, g2 d1, d2 s1, s2 gate drain source absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v a i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current e as single pulse avalanche energy mj p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 6.9 r ja junction-to-ambient ??? 65 77 18 7.2 0.15 10lb in (1.1n m) -55 to + 150 300 max. 6.2 34 20 150 8.7 v ds 150 v r ds(on) typ. @ 10v 80 m q g typ. 13 nc q sw typ. 4.1 nc r g(int) typ. 2.5 ? t j max 150 c key parameters

2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 5.8mh, r g = 25 ? , i as = 5.2a. pulse width 400s; duty cycle 2%. r is measured at
limited by tjmax. see figs. 14, 15, 17a, 17b for repetitive avalanche information
specifications refer to single mosfet. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 150 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.19 ??? v/c r ds(on) static drain-to-source on-resistance ??? 80 95 m ? v gs(th) gate threshold voltage 3.0 ??? 4.9 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -11 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 g fs forward transconductance 11 ??? ??? s q g total gate charge ??? 13 20 q gs1 pre-vth gate-to-source charge ??? 3.3 ??? q gs2 post-vth gate-to-source charge ??? 0.8 ??? nc q gd gate-to-drain charge ??? 3.9 ??? q godr gate charge overdrive ??? 5.0 ??? see fig. 6 and 19 q sw switch charge (q gs2 + q gd ) ??? 4.1 ??? r g(int) internal gate resistance ??? 2.5 ??? ? t d(on) turn-on delay time ??? 7.0 ??? t r rise time ??? 6.6 ??? t d(off) turn-off delay time ??? 13 ??? ns t f fall time ??? 3.1 ??? c iss input capacitance ??? 810 ??? c oss output capacitance ??? 100 ??? pf c rss reverse transfer capacitance ??? 15 ??? c oss effective output capacitance ??? 97 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package diode characteristics parameter min. typ. max. units i s @ t c = 25c continuous source current ??? ??? 8.7 (body diode) a i sm pulsed source current ??? ??? 34 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 57 86 ns q rr reverse recovery charge ??? 140 210 nc i d = 5.2a ? = 1.0mhz, see fig.5 t j = 25c, i f = 5.2a di/dt = 100a/s t j = 25c, i s = 5.2a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 5.2a v ds = v gs , i d = 50a v ds = 150v, v gs = 0v v gs = 0v, v ds = 0v to 120v v ds = 150v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 10v i d = 5.2a v gs = 0v mosfet symbol r g = 2.4 ? v ds = 50v, i d = 5.2a conditions and center of die contact v dd = 75v, v gs = 10v v ds = 75v v ds = 25v

www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 5.5v vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.5v 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 5 10 15 20 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 120v vds= 75v vds= 30v i d = 5.2a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 150c 5.5v vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 5.2a v gs = 10v 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 50v 60s pulse width t j = 25c t j = 175c

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t j , junction temperature (c) 0 2 4 6 8 10 i d , d r a i n c u r r e n t ( a ) 0.00.51.01.5 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 3.0 4.0 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? (sec) 1.508254 0.000814 2.154008 0.111589 3.237738 2.2891 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc

www.irf.com 5 fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage 4 5 6 7 8 9 10 v gs , gate-to-source voltage (v) 0.0 0.1 0.2 0.3 0.4 0.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 125c i d = 5.2a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.91a 1.1a bottom 5.2a fig 14.

for hexfet power mosfets
?
? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - ?
?
!"!! ?

# $$ ? !"!!%"

6 www.irf.com fig 16a. switching time test circuit fig 16b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 15b. unclamped inductive waveforms fig 15a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 17a. gate charge test circuit fig 17b gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s &' 1 (
# 0.1 % ! + -

www.irf.com 7 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/06 to-220 full-pak 5-pin part marking information
!"!# to-220 full-pak 5-pin package outline, lead-form option 117 (dimensions are shown in millimeters (inches))
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

▲Up To Search▲

Price & Availability of IRFI4019H-117P-15

	To Download IRFI4019H-117P-15 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .